Simulative analysis of Copper Indium Gallium Selinide (CIGS) Thin Film Solar Cell

Muhammad Garba Wakili,Yahaya Ado Sumaila,Saddiq Abubakar Dalhatu, Hauwa Muhammad Mari and Abubakar Isah 

Keywords: Solar Cell, Thin film, CIGS, SCAPS-1D.


This research aims to study the performances of Cupper Indium Gallium Selenide (CIGS) Solar Cells. The Photovoltaic parameters of different buffer layer materials such as InS, ZnO, ZnS, ZnSe and CdS was simulated in solar cell capacitance simulator (SCAPS). The main idea behind this analysis is the investigation of effect of different buffer layer; absorber layer thickness; and effect of temperature of CIGS S+olar Cell. Various thicknesses of CIGS absorber layer ranging from 1 to 5 μm was used to determine the efficiency and fill factor. The thickness of the absorber layer affects the current density, efficiency, fill factor and open circuit voltage. The optimum value of absorber thickness is chosen to be 4.5μm. Temperature also had a direct effect on solar cell performance as with an increase in temperature overall efficiency decreased. This happens because with the increase in temperature diode reverse saturation current increases that in turn affects the open circuit voltage of the solar cell. So, with a decrease in open circuit voltage other function parameters of solar cell also reduced.